TK25S06N1L,LQ, MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK+ PD=57W F=1MHZ
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см. техническую документацию
см. техническую документацию
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Описание
Unclassified
U-MOSVIII-H Low Voltage High Efficiency MOSFETsToshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with the latest Gen 8 trench MOS process, which helps to improve the efficiency of power supplies. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.
Технические параметры
Brand: | Toshiba |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2000 |
Fall Time: | 6 ns |
Id - Continuous Drain Current: | 25 A |
Manufacturer: | Toshiba |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DPAK-3 |
Pd - Power Dissipation: | 57 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 15 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 18.5 mOhms |
Rise Time: | 8 ns |
Series: | TK25S06N1L |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | U-MOSVIII-H |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 23 ns |
Typical Turn-On Delay Time: | 14 ns |
Vds - Drain-Source Breakdown Voltage: | 60 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
Вес, г | 0.36 |
Техническая документация
Datasheet
pdf, 274 КБ
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