TK380A60Y,S4X, MOSFET N-Ch DTMOSV 600V 30W 590pF 9.7A
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
DTMOSV Super Junction MOSFETsToshiba DTMOSV Super Junction MOSFETs are N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOSV operates with lower EMI noise, and a 17% reduction On-Resistance R DS(ON) compared to the DTMOSIV MOSFETs. The DTMOSV has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of R DS(ON) when compared with more conventional planar processes. DTMOSV Super Junction MOSFETs are ideal to improve performance and facilitate the design of power conversion applications. Applications include switching power supplies, power factor correction (PFC) designs, and LED lighting.
Технические параметры
| Brand: | Toshiba |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 8.2 ns |
| Id - Continuous Drain Current: | 9.7 A |
| Manufacturer: | Toshiba |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 30 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 20 nC |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Rise Time: | 23 ns |
| Series: | TK380A60Y |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | DTMOSV |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 150 ns |
| Typical Turn-On Delay Time: | 60 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Base Product Number | TC74VHC32 -> |
| Current - Continuous Drain (Id) @ 25В°C | 9.7A (Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 300V |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 30W |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 4.9A, 10V |
| RoHS Status | RoHS Compliant |
| Series | DTMOSV -> |
| Supplier Device Package | TO-220SIS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4V @ 360ВµA |
| Вес, г | 1.95 |
Техническая документация
Datasheet TK380A60Y,S4X
pdf, 443 КБ
Datasheet TK380A60Y.S4X
pdf, 444 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 августа1 | бесплатно |
| HayPost | 21 августа1 | 1 650 ֏2 |
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