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TPN2R903PL,L1Q, MOSFET POWER MOSFET TRANSISTOR

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14681 шт., срок 6-9 недель

980 ֏

Добавить в корзину 1 шт. на сумму 980 ֏

Номенклатурный номер: 8004639256

Бренд: Toshiba

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

U-MOSIX-H MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers, and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.

Технические параметры

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	5000
Fall Time:	8.2 ns
Id - Continuous Drain Current:	122 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TSON-8
Pd - Power Dissipation:	75 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	26 nC
Rds On - Drain-Source Resistance:	2.9 mOhms
Rise Time:	4.7 ns
Series:	TPN2R903PL
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSIX-H
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	12 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Вес, г	0.02