SI4168DY-T1-GE3, MOSFET 30V Vds 20V Vgs SO-8
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Si4 TrenchFET® Power MOSFETsVishay / Siliconix Si4 TrenchFET® Power MOSFETs are used for amplifying electronic signals. These devices are available in N-channel, P-channel, and N- and P-channel versions. The Si4 MOSFETs offer different V GS and V DS options and temperature ranges. Vishay / Siliconix Si4 TrenchFET Power MOSFETs operate in an enhancement mode and are used for switching between electronic signals. These surface-mount MOSFETs are 100% R g and UIS tested.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4168DY-GE3 |
| Pd - Power Dissipation: | 5.7 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 5.7 mOhms |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Base Product Number | SI4168 -> |
| Current - Continuous Drain (Id) @ 25В°C | 24A (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1720pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Power Dissipation (Max) | 2.5W (Ta), 5.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 20A, 10V |
| RoHS Status | ROHS3 Compliant |
| Series | TrenchFETВ® -> |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 3V @ 250ВµA |
| Вес, г | 0.75 |
Техническая документация
Datasheet SI4168DY-T1-GE3
pdf, 186 КБ
