SI2319CDS-T1-BE3, MOSFETs P-CHANNEL 40V (D-S
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см. техническую документацию
см. техническую документацию
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630 ֏
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387 ֏
от 500 шт. —
293 ֏
Добавить в корзину 1 шт.
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Описание
Unclassified
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 8 ns |
| Id - Continuous Drain Current: | 4.4 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | SI2319CDS-T1-GE3 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 21 nC |
| Rds On - Drain-Source Resistance: | 77 mOhms |
| Rise Time: | 9 ns |
| Series: | SI2319CDS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 20 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 228 КБ
