IRF634STRRPBF, MOSFETs N-Chan 250V 8.1 Amp
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см. техническую документацию
2 760 ֏
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2 140 ֏
от 100 шт. —
1 610 ֏
от 500 шт. —
1 270 ֏
Добавить в корзину 1 шт.
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Описание
Unclassified
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Id - Continuous Drain Current: | 8.1 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-3 |
| Pd - Power Dissipation: | 74 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Rds On - Drain-Source Resistance: | 450 mOhms |
| Series: | IRF |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, кг | 32 |
