IRFR9310PBF, MOSFETs P-Chan 400V 1.8 Amp
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Альтернативные предложения1
Описание
Unclassified
Описание Транзистор P-МОП, полевой, -400В, -1,8А, 50Вт, DPAK
Технические параметры
Категория продукта | МОП-транзистор |
Подкатегория | MOSFETs |
Размер фабричной упаковки | 3000 |
Серия | IRFR/U |
Технология | Si |
Тип продукта | MOSFET |
Торговая марка | Vishay / Siliconix |
Упаковка | Tube |
Current - Continuous Drain (Id) @ 25В°C | 1.8A(Tc) |
Drain to Source Voltage (Vdss) | 400V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
Manufacturer | Vishay Siliconix |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
Packaging | Tape & Reel(TR) |
Part Status | Active |
Power Dissipation (Max) | 50W(Tc) |
Rds On (Max) @ Id, Vgs | 7 Ohm @ 1.1A, 10V |
Series | - |
Supplier Device Package | D-Pak |
Technology | MOSFET(Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
ECCN (US) | EAR99 |
Material | Si |
Maximum Continuous Drain Current (A) | 1.8 |
Maximum Diode Forward Voltage (V) | 4 |
Maximum Drain Source Resistance (mOhm) | 7000@10V |
Maximum Drain Source Voltage (V) | 400 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 100 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 50000 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 |
Minimum Gate Threshold Voltage (V) | 2 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Operating Junction Temperature (°C) | -55 to 150 |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 24 |
Typical Gate Charge @ 10V (nC) | 13(Max) |
Typical Gate Charge @ Vgs (nC) | 13(Max)@10V |
Typical Gate Plateau Voltage (V) | 5.1 |
Typical Gate to Drain Charge (nC) | 5(Max) |
Typical Gate to Source Charge (nC) | 3.2(Max) |
Typical Input Capacitance @ Vds (pF) | 270@25V |
Typical Output Capacitance (pF) | 50 |
Typical Reverse Recovery Charge (nC) | 640 |
Typical Reverse Recovery Time (ns) | 170 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 8@25V |
Typical Rise Time (ns) | 10 |
Typical Turn-Off Delay Time (ns) | 25 |
Typical Turn-On Delay Time (ns) | 11 |
Вес, г | 1 |
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