HFA3127RZ, RF Bipolar Transistors W/ANNEAL TXARRAY 5X NPN 16LD 3X3

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508 шт., срок 7-9 недель

14 900 ֏

от 10 шт. — 12 900 ֏

от 20 шт. — 11 700 ֏

от 100 шт. — 9 500 ֏

1 шт. на сумму 14 900 ֏

Номенклатурный номер: 8004657165

RF & Wireless\RF Transistors\RF Bipolar Transistors

Brand:	Renesas/Intersil
Collector- Base Voltage VCBO:	12 V
Collector- Emitter Voltage VCEO Max:	8 V
Configuration:	Quint
Continuous Collector Current:	0.065 A
DC Collector/Base Gain hfe Min:	40
DC Current Gain hFE Max:	40 at 10 mA at 2 V
Emitter- Base Voltage VEBO:	5.5 V
Factory Pack Quantity: Factory Pack Quantity:	100
Gain Bandwidth Product fT:	8000 MHz(Typ)
Manufacturer:	Renesas Electronics
Maximum DC Collector Current:	0.065 A
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-55 C
Moisture Sensitive:	Yes
Operating Frequency:	8000 MHz(Typ)
Package / Case:	QFN EP
Packaging:	Tube
Pd - Power Dissipation:	150 mW
Product Category:	RF Bipolar Transistors
Product Type:	RF Bipolar Transistors
Series:	HFA3127
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Transistor Type:	Bipolar
Type:	RF Bipolar Small Signal
Вес, г	0.02