UF3SC065007K4S, SiC MOSFETs 650V/7mOhms, SiCFET,G3,TO247-4

UF3SC 650V and 1200V High-Performance SiC FETs

UnitedSiC UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.