UF3SC120009K4S, SiC MOSFETs 1200V/9mOhms, SICFET,G3,TO247-4
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см. техническую документацию
см. техническую документацию
951 шт., срок 6-8 недель
69 400 ֏
1 шт.
на сумму 69 400 ֏
Номенклатурный номер: 8004668870
Бренд: Qorvo Inc.
Описание
Unclassified
UF3SC 650V and 1200V High-Performance SiC FETsUnitedSiC UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. The UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for EV charging, PV inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.
Технические параметры
Brand: | Qorvo/UnitedSiC |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Id - Continuous Drain Current: | 120 A |
Manufacturer: | Qorvo |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-4 |
Packaging: | Tube |
Pd - Power Dissipation: | 789 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 234 nC |
Qualification: | AEC-Q101 |
Rds On - Drain-Source Resistance: | 11 mOhms |
Series: | UF3SC |
Subcategory: | MOSFETs |
Technology: | SiC |
Tradename: | SiC FET |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Вес, г | 6 |
Техническая документация
Datasheet
pdf, 354 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 4 сентября1 | бесплатно |
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