DXT2010P5-13, Bipolar Transistors - BJT BIPOLAR TRANS,NPN 60V,6A

DXT2010P5-13, Bipolar Transistors - BJT BIPOLAR TRANS,NPN 60V,6A
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см. техническую документацию
800 ֏
от 10 шт.620 ֏
от 100 шт.432 ֏
от 500 шт.347 ֏
1 шт. на сумму 800 ֏
Номенклатурный номер: 8004674857
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
PowerDI 5 Bipolar Transistors
Diodes Incorporated PowerDI ® 5 Bipolar Transistors are the first bipolar transistors in a PowerDI 5 package, which provides a 47% space savings over the SOT223 package. These Diodes Incorporated PowerDI 5 bipolar transistors are also 60% smaller than DPAK (TO252) package devices.

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 150 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 260 mV
Configuration: Single
Continuous Collector Current: 6 A
DC Collector/Base Gain hfe Min: 20 at 10 A, 1 V
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 5000
Gain Bandwidth Product fT: 130 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 6 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: PowerDI-5
Pd - Power Dissipation: 740 mW
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: DXT201
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.1

Техническая документация

Datasheet DXT2010P5-13
pdf, 198 КБ