FMMT495TA, Bipolar Transistors - BJT NPN High Voltage
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см. техническую документацию
см. техническую документацию
484 ֏
от 10 шт. —
348 ֏
от 100 шт. —
190 ֏
от 1000 шт. —
127 ֏
1 шт.
на сумму 484 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Описание Транзистор: NPN, биполярный, 150В, 1А, 500мВт, SOT23
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 170 V |
| Collector- Emitter Voltage VCEO Max: | 150 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Configuration: | Single |
| Continuous Collector Current: | 1 A |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 500 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FMMT495 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
| Collector-Emitter Breakdown Voltage | 150V |
| Maximum DC Collector Current | 1A |
| Pd - Power Dissipation | 500mW |
| Transistor Type | NPN |
| Maximum Collector Base Voltage | 170 V |
| Maximum Collector Emitter Voltage | 150 V |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 100 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Polarity | NPN; Collector Emitter Voltage V(br)ceo |
| Вес, г | 0.01 |
