FZT758TA, Bipolar Transistors - BJT PNP High Voltage
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см. техническую документацию
см. техническую документацию
710 ֏
от 10 шт. —
660 ֏
от 100 шт. —
445 ֏
от 500 шт. —
383 ֏
1 шт.
на сумму 710 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 400 V |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| DC Current Gain hFE Max: | 50 |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 50 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Pd - Power Dissipation: | 2 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| REACH - SVHC: | Details |
| Series: | FZT758 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | 400 V |
| Maximum Collector Emitter Voltage | 400 V |
| Maximum DC Collector Current | 500 mA |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Frequency | 50 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2 W |
| Minimum DC Current Gain | 50 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3+Tab |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.12 |
