FZT953TA, Bipolar Transistors - BJT PNP HighCt Low Sat

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1 280 ֏

от 10 шт. — 1 020 ֏

от 100 шт. — 680 ֏

от 500 шт. — 540 ֏

1 шт. на сумму 1 280 ֏

Номенклатурный номер: 8004674868

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: PNP, биполярный, 100В, 5А, 1,6Вт, SOT223 Характеристики

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	140 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	420 mV
Configuration:	Single
DC Collector/Base Gain hfe Min:	15
DC Current Gain hFE Max:	100
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	125 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	5 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-223-4
Pd - Power Dissipation:	3 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	FZT953
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Collector-Emitter Breakdown Voltage	100V
Maximum DC Collector Current	5A
Pd - Power Dissipation	3W
Transistor Type	PNP
Maximum Collector Base Voltage	140 V
Maximum Collector Emitter Voltage	-100 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	125 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3 W
Minimum DC Current Gain	100
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223(SC-73)
Pin Count	3+Tab
Transistor Configuration	Single
Вес, г	0.11