FZT957TA, Bipolar Transistors - BJT PNP HighCt HighV
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см. техническую документацию
см. техническую документацию
1 280 ֏
от 10 шт. —
1 020 ֏
от 100 шт. —
720 ֏
от 500 шт. —
540 ֏
1 шт.
на сумму 1 280 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 300V 1A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 330 V |
| Collector- Emitter Voltage VCEO Max: | 300 V |
| Collector-Emitter Saturation Voltage: | 170 mV |
| Configuration: | Single |
| Continuous Collector Current: | -1 A |
| DC Collector/Base Gain hFE Min: | 90 at-1 A, -10 V |
| DC Current Gain hFE Max: | 300 at-500 mA, -10 V |
| Emitter- Base Voltage VEBO: | 7 V |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Gain Bandwidth Product fT: | 85 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 1 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package/Case: | SOT-223-4 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | FZT957 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Collector Emitter Voltage Max | 300В |
| Continuous Collector Current | 1А |
| DC Current Gain hFE Min | 90hFE |
| DC Усиление Тока hFE | 90hFE |
| Power Dissipation | 3Вт |
| Квалификация | AEC-Q101 |
| Количество Выводов | 3вывод(-ов) |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Полярность Транзистора | PNP |
| Стиль Корпуса Транзистора | SOT-223 |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Частота Перехода ft | 85МГц |
| Automotive | No |
| Configuration | Single Dual Collector |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Base Emitter Saturation Voltage (V) | 1.15@300mA@1A |
| Maximum Collector Base Voltage (V) | 300 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@10mA@100mA|0.165@100mA@500mA|0.24@300mA@1A |
| Maximum Collector-Emitter Voltage (V) | 300 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum Transition Frequency (MHz) | 85(Typ) |
| Minimum DC Current Gain | 100@10mA@10V|100@500mA@10V|90@1A@10V |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | No |
| Product Category | Bipolar Power |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Tab | Tab |
| Type | PNP |
| Maximum Collector Base Voltage | 300 V |
| Maximum Collector Emitter Voltage | -300 V |
| Maximum DC Collector Current | -1 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 85 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3 W |
| Mounting Type | Surface Mount |
| Package Type | SOT-223(SC-73) |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.11 |
