CSD17310Q5A, MOSFETs 30V N Channel NexFET Power MOSFET
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см. техническую документацию
см. техническую документацию
1 190 ֏
от 10 шт. —
880 ֏
от 100 шт. —
670 ֏
от 500 шт. —
510 ֏
1 шт.
на сумму 1 190 ֏
Описание
Unclassified
TI N-Channel 8-23-12
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | TPS40007EVM-001, TPS51220EVM |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 85 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3.1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.9 nC |
| Rds On - Drain-Source Resistance: | 5.1 mOhms |
| Rise Time: | 11.6 ns |
| Series: | CSD17310Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 6.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 900 mV |
| Transistor Polarity | N Channel; Continuous Drain Current Id |
| Вес, г | 0.28 |
