CSD17507Q5A, MOSFETs 30V NChannel Hi Side NexFET Pwr MOSFET
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см. техническую документацию
см. техническую документацию
840 ֏
от 10 шт. —
750 ֏
от 100 шт. —
510 ֏
от 500 шт. —
400 ֏
1 шт.
на сумму 840 ֏
Описание
Unclassified
CSD17507Q5A NexFET™ Power MOSFETsTexas Instruments CSD17507Q5A N-channel NexFET™ power MOSFETs are 30V devices deisgned to minimize losses in power conversion applications. TI CSD17507Q5A NexFET power MOSFETs feature low thermal resistance as well as ultralow gate charge totla (Qg) and gate charge gate to drain (Qgd). The TI CSD17507Q5A has a 1.6V threshold voltage. These TI NexFET power MOSFETs are optimized for control FET applications and are also ideal for point-of-load synchronous buck in networking, telecom, and computing systems.
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Forward Transconductance - Min: | 16 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 2.8 nC |
| Rds On - Drain-Source Resistance: | 16.1 mOhms |
| Series: | CSD17507Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Вес, г | 0.0837 |
