CSD19533KCS, MOSFET 100V 8.7mOhm N-CH Pwr MOSFET
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 188Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 450 |
| Fall Time: | 2 ns |
| Forward Transconductance - Min: | 115 S |
| Id - Continuous Drain Current: | 100 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 188 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 27 nC |
| Rds On - Drain-Source Resistance: | 10.5 mOhms |
| Rise Time: | 5 ns |
| Series: | CSD19533KCS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 7 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.8 V |
| Case | TO220-3 |
| Drain current | 100A |
| Drain-source voltage | 100V |
| Gate charge | 27nC |
| Gate-source voltage | ±20V |
| Heatsink thickness | 1.14…1.4mm |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | TEXAS INSTRUMENTS |
| Mounting | THT |
| On-state resistance | 8.7mΩ |
| Polarisation | unipolar |
| Power dissipation | 188W |
| Technology | NexFET™ |
| Type of transistor | N-MOSFET |
| Вес, г | 2 |
