2N6551 PBFREE, Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo

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178 шт., срок 5-8 недель

5 900 ֏

от 10 шт. — 4 850 ֏

от 25 шт. — 4 490 ֏

от 100 шт. — 3 780 ֏

Добавить в корзину 1 шт. на сумму 5 900 ֏

Номенклатурный номер: 8004700455

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	1 V
Configuration:	Single
Continuous Collector Current:	1 A
DC Collector/Base Gain hfe Min:	80
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	500
Gain Bandwidth Product fT:	375 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	Through Hole
Package / Case:	TO-202
Packaging:	Bulk
Pd - Power Dissipation:	2 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Вес, г	6.92