CMPTA42E TR PBFREE, Bipolar Transistors - BJT NPN Enhanced High Voltage

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19291 шт., срок 5-8 недель

670 ֏

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Добавить в корзину 1 шт. на сумму 670 ֏

Номенклатурный номер: 8004700492

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	350 V
Collector- Emitter Voltage VCEO Max:	350 V
Collector-Emitter Saturation Voltage:	125 mV
Configuration:	Single
Continuous Collector Current:	500 mA
DC Collector/Base Gain hfe Min:	50
DC Current Gain hFE Max:	110
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	500 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23
Pd - Power Dissipation:	350 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Вес, г	0.01