CXT3019 TR PBFREE, Bipolar Transistors - BJT NPN 140Vcbo 80Vceo 7.0Vebo 1.0A 1.2W

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8807 шт., срок 7-9 недель

1 240 ֏

от 10 шт. — 970 ֏

от 100 шт. — 700 ֏

от 500 шт. — 550 ֏

1 шт. на сумму 1 240 ֏

Номенклатурный номер: 8004700508

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Биполярный (BJT) транзистор NPN 80V 1A 100MHz 1.2W Surface Mount SOT-89

Brand:	Central Semiconductor
Collector- Base Voltage VCBO:	140 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Emitter- Base Voltage VEBO:	7 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Central Semiconductor
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Pd - Power Dissipation:	1.2 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Subcategory:	Transistors
Transistor Polarity:	NPN
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-65В°C ~ 175В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-243AA
Power - Max	1.2W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-89
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	80V
Вес, г	0.05