BC857CT-7-F, Bipolar Transistors - BJT PNP BIPOLAR
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см. техническую документацию
см. техническую документацию
436 ֏
от 10 шт. —
308 ֏
от 100 шт. —
119 ֏
от 1000 шт. —
85 ֏
1 шт.
на сумму 436 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 650 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 420 at-2 mA, -5 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Pd - Power Dissipation: | 150 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC857C |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Maximum Collector Base Voltage | -50 V |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum DC Collector Current | 100 mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 150 mW |
| Minimum DC Current Gain | 420 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-523(SC-89) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | PNP |
| Вес, г | 0.002 |
