DSS4240T-7, Bipolar Transistors - BJT NPN 40V 2A
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344 ֏
от 10 шт. —
242 ֏
от 100 шт. —
93 ֏
от 1000 шт. —
69 ֏
1 шт.
на сумму 344 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT NPN 40V 2A 730mW 3-Pin SOT-23 T/R
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 40 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 320 mV |
Configuration: | Single |
DC Collector/Base Gain hfe Min: | 150 at 2 A, 2 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 100 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 2 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 600 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | DSS42 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 1.1 200mA 2A |
Maximum Collector Base Voltage (V) | 40 |
Maximum Collector-Emitter Voltage (V) | 40 |
Maximum DC Collector Current (A) | 2 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 730 |
Maximum Transition Frequency (MHz) | 100(Min) |
Minimum DC Current Gain | 350 0.1A 2V|300 0.5A 2V|300 1A 2V|150 2A 2V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | NRND |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Power |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Type | NPN |
Maximum Collector Base Voltage | 40 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 2 A |
Maximum Emitter Base Voltage | 5 V |
Maximum Operating Frequency | 100 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 600 mW |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 0.01 |