MMBTH10-7-F, Bipolar Transistors - BJT 25V 300mW
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344 ֏
от 10 шт. —
225 ֏
от 100 шт. —
93 ֏
от 1000 шт. —
59 ֏
1 шт.
на сумму 344 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
РЧ-транзистор NPN 25V 50mA 650MHz 300mW Surface Mount SOT-23-3
Технические параметры
| Base Product Number | MMBTH10 -> |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| ECCN | EAR99 |
| Frequency - Transition | 650MHz |
| HTSUS | 8541.21.0075 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 300mW |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Maximum Collector Base Voltage | 30 V |
| Maximum Collector Emitter Voltage | 25 V |
| Maximum DC Collector Current | 50 mA |
| Maximum Emitter Base Voltage | 3 V |
| Maximum Operating Frequency | 650 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 60 |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 0.008 |
