FZ1800R17HE4_B9, IGBT Modules IGBT 1700V 1800A
954 000 ֏
Добавить в корзину 1 шт.
на сумму 954 000 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 1.8 kA |
| Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | SP001172066 FZ1800R17HE4B9HOSA2 |
| Pd - Power Dissipation: | 11.5 kW |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, кг | 2 |
Техническая документация
Datasheet
pdf, 796 КБ
