FF1200R17IP5PBPSA1, IGBT Modules PP IHM I

729 000 ֏
Добавить в корзину 1 шт. на сумму 729 000 ֏
Номенклатурный номер: 8004723153

Описание

Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
FF1200R1x PrimePACK™2 Modules Infineon Technologies FF1200R1x PrimePACK™2 Modules are designed with Trench/Fieldstop IGBT5 featuring emitter controlled 5 diodes and NTC/pre-applied thermal interface material. The FF1200R17IP5P modules offer extended operating temperature, high short-circuit capability, high current density, low switching losses, and unbeatable robustness. The FF1200R1x modules are ideal for use in high power converters, motor drives, UPS systems, traction drives, and wind turbines.

Технические параметры

Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 1.75 V
Configuration: Dual
Continuous Collector Current at 25 C: 1.2 kA
Factory Pack Quantity: 3
Gate-Emitter Leakage Current: 400 nA
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Packaging: Tray
Part # Aliases: FF1200R17IP5P SP001663854
Pd - Power Dissipation: 1.2 MW
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs
Technology: Si
Base Product Number FF1200 ->
Configuration Half Bridge
Current - Collector (Ic) (Max) 1.2kA
Current - Collector Cutoff (Max) 10mA
ECCN EAR99
HTSUS 8541.29.0095
IGBT Type Trench Field Stop
Input Standard
Input Capacitance (Cies) @ Vce 68nF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Chassis Mount
NTC Thermistor Yes
Operating Temperature -40В°C ~ 175В°C (TJ)
Package Tray
Package / Case Module
Power - Max 20mW
RoHS Status ROHS3 Compliant
Series PrimePackв„ў2 ->
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 1200A
Voltage - Collector Emitter Breakdown (Max) 1700V
Вес, г 1

Техническая документация

Datasheet
pdf, 554 КБ
Datasheet
pdf, 520 КБ