IKW40N120H3, IGBT Transistors IGBT PRODUCTS

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9 600 ֏

от 10 шт. — 7 900 ֏

от 25 шт. — 7 100 ֏

от 100 шт. — 6 100 ֏

Добавить в корзину 1 шт. на сумму 9 600 ֏

Номенклатурный номер: 8004723228

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	2.05 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	80 A
Factory Pack Quantity: Factory Pack Quantity:	240
Gate-Emitter Leakage Current:	600 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Packaging:	Tube
Part # Aliases:	SP000674416 IKW4N12H3XK IKW40N120H3FKSA1
Pd - Power Dissipation:	483 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	Trenchstop IGBT4
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP
Brand	Infineon Technologies
Collector- Emitter Voltage VCEO Max	1200 V
Collector-Emitter Saturation Voltage	2.05 V
Configuration	Single
Continuous Collector Current At 25 C	80 A
Continuous Collector Current Ic Max	80 A
Factory Pack Quantity	240
Gate-Emitter Leakage Current	600 nA
Manufacturer	Infineon
Maximum Gate Emitter Voltage	20 V
Maximum Operating Temperature	+175 C
Minimum Operating Temperature	-40 C
Mounting Style	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Part # Aliases	IKW40N120H3FKSA1 IKW4N12H3XK SP000674416
Pd - Power Dissipation	483 W
Product Category	IGBT Transistors
Product Type	IGBT Transistors
Series	HighSpeed 3
Subcategory	IGBTs
Technology	Si
Tradename	TRENCHSTOP
Вес, г	38