IXFB30N120P, MOSFETs 30 Amps 1200V 0.35 Rds
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см. техническую документацию
см. техническую документацию
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Описание
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Описание Транзистор: N-MOSFET, Polar™, полевой, 1,2кВ, 30А, 1250Вт, PLUS264™ Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 25 |
| Fall Time: | 56 ns |
| Forward Transconductance - Min: | 13 S |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | PLUS-264-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.25 kW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 310 nC |
| Rds On - Drain-Source Resistance: | 350 mOhms |
| Rise Time: | 60 ns |
| Series: | IXFB30N120P |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | Polar HiPerFET Power MOSFET |
| Typical Turn-Off Delay Time: | 95 ns |
| Typical Turn-On Delay Time: | 57 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
| Вес, г | 1.6 |
Техническая документация
Datasheet
pdf, 149 КБ
