IXFH26N100X, MOSFETs 1000V 26A TO-247 Power MOSFET
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22 600 ֏
от 10 шт. —
18 900 ֏
от 30 шт. —
16 300 ֏
от 60 шт. —
14 300 ֏
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Описание
Unclassified
X-Class 850V - 1000V Power MOSFETs with HiPerFET™IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Технические параметры
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Fall Time: | 8 ns |
| Forward Transconductance - Min: | 11 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 860 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 113 nC |
| Rds On - Drain-Source Resistance: | 320 mOhms |
| Rise Time: | 20 ns |
| Series: | X-Class |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 62 ns |
| Typical Turn-On Delay Time: | 29 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.5 V |
| Вес, г | 6 |
Техническая документация
Datasheet
pdf, 281 КБ
