IXFH34N65X2, MOSFETs MOSFET 650V/34A Ultra Junction X2
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9 800 ֏
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8 000 ֏
от 30 шт. —
6 800 ֏
от 120 шт. —
5 800 ֏
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Описание
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X-Class 850V - 1000V Power MOSFETs with HiPerFET™IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Технические параметры
Brand: | IXYS |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Fall Time: | 16 ns |
Forward Transconductance - Min: | 14 S |
Id - Continuous Drain Current: | 34 A |
Manufacturer: | IXYS |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 540 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 56 nC |
Rds On - Drain-Source Resistance: | 105 mOhms |
Rise Time: | 45 ns |
Series: | 650V Ultra Junction X2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | HiPerFET |
Transistor Polarity: | N-Channel |
Typical Turn-Off Delay Time: | 47 ns |
Typical Turn-On Delay Time: | 46 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.4V |
Maximum Continuous Drain Current | 34 A |
Maximum Drain Source Resistance | 100 mΩ |
Maximum Drain Source Voltage | 650 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 540 W |
Minimum Gate Threshold Voltage | 2.7V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Package Type | TO-247 |
Pin Count | 3 |
Series | HiperFET, X2-Class |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 56 nC @ 10 V |
Width | 21.45mm |
Вес, г | 1.6 |