IRFP450PBF, MOSFETs 500V N-CH HEXFET
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см. техническую документацию
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4 360 ֏
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3 650 ֏
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от 100 шт. —
2 470 ֏
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Описание
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Описание Транзистор: N-MOSFET, полевой, 500В, 8,7А, 190Вт, TO247AC Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Fall Time: | 44 ns |
| Forward Transconductance - Min: | 9.3 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 150 nC |
| Rds On - Drain-Source Resistance: | 400 mOhms |
| Rise Time: | 47 ns |
| Series: | IRFP |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 92 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 14 |
| Maximum Drain Source Resistance (mOhm) | 400@10V |
| Typical Gate Charge @ Vgs (nC) | 150(Max)@10V |
| Typical Gate Charge @ 10V (nC) | 150(Max) |
| Typical Input Capacitance @ Vds (pF) | 2600@25V |
| Maximum Power Dissipation (mW) | 190000 |
| Typical Fall Time (ns) | 44 |
| Typical Rise Time (ns) | 47 |
| Typical Turn-Off Delay Time (ns) | 92 |
| Typical Turn-On Delay Time (ns) | 17 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-247AC |
| Standard Package Name | TO-247 |
| Military | No |
| Mounting | Through Hole |
| Package Height | 20.7(Max) |
| Package Length | 15.87(Max) |
| Package Width | 5.31(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Through Hole |
| Крутизна характеристики S,А/В | 9.3 |
| Максимальное пороговое напряжение затвор-исток Uзи макс.,В | 4 |
| Сопротивление канала в открытом состоянии Rси вкл.,мОм | 400 |
| Температура, С | -55…+150 |
| Current - Continuous Drain (Id) @ 25В°C | 14A(Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Power Dissipation (Max) | 190W(Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 8.4A, 10V |
| Series | - |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Maximum Diode Forward Voltage (V) | 1.4 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 56 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Gate Plateau Voltage (V) | 5.8 |
| Typical Gate to Drain Charge (nC) | 80(Max) |
| Typical Gate to Source Charge (nC) | 20(Max) |
| Typical Output Capacitance (pF) | 720 |
| Typical Reverse Recovery Charge (nC) | 4800 |
| Typical Reverse Recovery Time (ns) | 540 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 340@25V |
| Вес, г | 5 |
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