IRFR9210PBF, MOSFETs 200V P-CH HEXFET MOSFET D
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Описание
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MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.9A, Drain Source Voltage Vds:-200V, On Resistance Rds(on):3ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2V , RoHS Compliant: Yes
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Id - Continuous Drain Current: | 1.9 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-252-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.9 nC |
| Rds On - Drain-Source Resistance: | 3 Ohms |
| Series: | IRFR |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Вес, г | 0.33 |
