IRS21844MTRPBF, Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn

IRS21844MTRPBF, Gate Drivers Hlf Brdg Drvr Sft Trn On Invrt ShutDwn
Изображения служат только для ознакомления,
см. техническую документацию
3 340 ֏
от 10 шт.2 670 ֏
от 100 шт.2 020 ֏
от 250 шт.1 900 ֏
Добавить в корзину 1 шт. на сумму 3 340 ֏
Номенклатурный номер: 8004743077

Описание

Power\Power Management ICs\Gate Drivers
High Voltage Gate Driver ICs
Infineon High Voltage Gate Driver ICs are a simple, compact solution for driving MOSFETs or IGBTs up to 1200V in applications up to 12kW. These Infineon 600V and 1200V High Voltage Gate Driver ICs can save up to 30% in part count in a 50% smaller PCB area compared to a discrete optocoupler or transformer-based solutions. These Infineon devices provide full driver capability with extremely fast switching speeds, designed-in ruggedness, and low-power dissipation. These High Voltage Gate Driver ICs generate the current and voltage necessary to turn MOSFETs or IGBTs on and off from the logic output of a DSP, microcontroller, or other logic device. These Infineon devices feature output currents up to 2A and are CMOS compatible. Most of the devices are also TTL compatible.

Технические параметры

Brand: Infineon Technologies
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 35 ns
Features: Synchronous
Logic Type: CMOS, TTL
Manufacturer: Infineon
Maximum Operating Temperature: +125 C
Maximum Turn-Off Delay Time: 270 ns
Maximum Turn-On Delay Time: 680 ns
Minimum Operating Temperature: -40 C
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Number of Drivers: 2 Driver
Number of Outputs: 2 Output
Output Current: 1.9 A
Package / Case: MLPQ-16
Pd - Power Dissipation: 2.08 W
Product Category: Gate Drivers
Product Type: Gate Drivers
Product: IGBT, MOSFET Gate Drivers
Propagation Delay - Max: 900 ns
Rise Time: 60 ns
Subcategory: PMIC-Power Management ICs
Supply Voltage - Max: 20 V
Supply Voltage - Min: 10 V
Technology: Si
Type: Half-Bridge
Вес, г 0.3

Техническая документация

Datasheet
pdf, 2899 КБ