Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › Qorvo › UF3C065030K4S, SiC MOSFETs 650V/30mOhms ...

UF3C065030K4S, SiC MOSFETs 650V/30mOhms, SICFET,G3,TO247-4

Изображения служат только для ознакомления,
см. техническую документацию

5445 шт., срок 6-8 недель

21 700 ֏

от 25 шт. — 17 100 ֏

от 100 шт. — 13 800 ֏

от 250 шт. — 11 700 ֏

1 шт. на сумму 21 700 ֏

Номенклатурный номер: 8004792658

Бренд: Qorvo Inc.

Описание

Unclassified

High-Performance SiC FETs
UnitedSiC / Qorvo High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

Технические параметры

Brand:	Qorvo
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	12 ns
Id - Continuous Drain Current:	85 A
Manufacturer:	Qorvo
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-4
Packaging:	Tube
Pd - Power Dissipation:	441 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	51 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	35 mOhms
Rise Time:	31 ns
Series:	UF3C
Subcategory:	MOSFETs
Technology:	SiC
Tradename:	SiC FET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	6