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UF3C065080B3, SiC MOSFETs 650V/80mOhms, SICFET,G3,TO263-3

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1410 шт., срок 6-8 недель

5 700 ֏

от 100 шт. — 4 140 ֏

от 800 шт. — 3 810 ֏

1 шт. на сумму 5 700 ֏

Номенклатурный номер: 8004792664

Бренд: Qorvo Inc.

Описание

Unclassified

UF3C SiC FETs

UnitedSiC / Qorvo UF3C High-Performance SiC FETs are cascode Silicon Carbide (SiC) products that co-package high-performance G3 SiC JFETs with a cascode-optimized Si MOSFET to produce a standard gate drive SiC device. This series exhibits ultra-low gate charge and is excellent for switching inductive loads and applications requiring a standard gate drive. The UnitedSiC / Qorvo UF3C SiC FETs are available in 650V, 1200V, and 1700V versions and are offered in D 2 PAK-3, D 2 PAK-7, D 2 PAK-7L, TO-247-3L, TO-247-4L, and TO-220-3L packages.

Технические параметры

Brand:	Qorvo/UnitedSiC
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	800
Fall Time:	12 ns
Id - Continuous Drain Current:	25 A
Manufacturer:	Qorvo
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	D2PAK-3
Pd - Power Dissipation:	115 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	51 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	100 mOhms
Rise Time:	13 ns
Series:	UF3C
Subcategory:	MOSFETs
Technology:	SiC
Tradename:	SiC FET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	25 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	2.16