UJ3C065080B3, SiC MOSFETs 650V/80mOhms, SICFET,G3,TO263-3
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см. техническую документацию
см. техническую документацию
675 шт., срок 6-8 недель
7 600 ֏
от 25 шт. —
6 400 ֏
от 100 шт. —
5 200 ֏
от 250 шт. —
4 030 ֏
1 шт.
на сумму 7 600 ֏
Номенклатурный номер: 8004792681
Бренд: Qorvo Inc.
Описание
Unclassified
UJ3C SiC FETsUnitedSiC / QorvoUJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a new SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection.
Технические параметры
| Brand: | Qorvo/UnitedSiC |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | Qorvo |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 115 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 51 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Rise Time: | 13 ns |
| Series: | UJ3C |
| Subcategory: | MOSFETs |
| Technology: | SiC |
| Tradename: | SiC FET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 59 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Case | D2PAK |
| Drain current | 18.2A |
| Drain-source voltage | 650V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 51nC |
| Gate-source voltage | ±25V |
| Kind of transistor | cascode |
| Manufacturer | Qorvo(UnitedSiC) |
| Mounting | SMD |
| On-state resistance | 80mΩ |
| Polarisation | unipolar |
| Power dissipation | 115W |
| Pulsed drain current | 65A |
| Technology | SiC |
| Type of transistor | N-JFET/N-MOSFET |
| Вес, г | 3.08 |
Техническая документация
Datasheet
pdf, 511 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 4 сентября1 | бесплатно |
| HayPost | 8 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
