UJ3C120150K3S, SiC MOSFETs 1200V/150mOhms, SICFET,G3,TO247-3

UJ3C120150K3S, SiC MOSFETs 1200V/150mOhms, SICFET,G3,TO247-3
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см. техническую документацию
425 шт., срок 6-8 недель
9 800 ֏
от 25 шт.8 200 ֏
от 100 шт.6 300 ֏
от 250 шт.5 300 ֏
1 шт. на сумму 9 800 ֏
Номенклатурный номер: 8004792686
Бренд: Qorvo Inc.

Описание

Unclassified
UJ3C SiC FETs

UnitedSiC / QorvoUJ3C SiC FETs are Silicon Carbide (SiC) FETs are based on a unique cascode configuration and optimized for soft-switching designs. The UJ3C SiC FETs are ideal for upgrading an existing silicon-based device or starting a new SiC-based design. These devices integrate a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode, and easy gate drive of the MOSFET with the efficiency, speed, and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection.

Технические параметры

Brand: Qorvo
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 30
Fall Time: 7 ns
Id - Continuous Drain Current: 18.4 A
Manufacturer: Qorvo
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 166.7 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 30 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 180 mOhms
Rise Time: 10 ns
Series: UJ3C
Subcategory: MOSFETs
Technology: SiC
Tradename: SiC FET
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 36 ns
Typical Turn-On Delay Time: 21 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Voltage: -25 V, +25 V
Vgs th - Gate-Source Threshold Voltage: 3.5 V
Вес, г 6

Техническая документация

Datasheet
pdf, 307 КБ

Сроки доставки

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