UJ3N120065K3S, JFETs 1200V/65mOhms,SIC, JFET,G3,TO247-3

UJ3N120065K3S, JFETs 1200V/65mOhms,SIC, JFET,G3,TO247-3
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745 шт., срок 6-8 недель
18 700 ֏
от 25 шт.13 600 ֏
от 100 шт.11 900 ֏
от 250 шт.10 500 ֏
1 шт. на сумму 18 700 ֏
Номенклатурный номер: 8004792698
Бренд: Qorvo Inc.

Описание

Unclassified
UJ3N Normally-On JFET Transistors

UnitedSiC / Qorvo UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (R DS(ON) ), as low as 25mΩ, and low gate charge (QG), allowing for low conduction and reduced switching loss. The device's normally-on characteristics with low R DS(ON) at VGS = 0V are also ideal for current protection circuits without the need for active control. The UJ3N JFET transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes, " giving all of the advantages of wide band-gap technology with very high operating voltages and easy gate drive.

Технические параметры

Brand: Qorvo/UnitedSiC
Configuration: Single
Drain-Source Current at Vgs=0: 5 uA
Factory Pack Quantity: Factory Pack Quantity: 30
Id - Continuous Drain Current: 34 A
Manufacturer: Qorvo
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Pd - Power Dissipation: 254 W
Product Category: JFET
Product Type: JFETs
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 90 mOhms
Series: UJ3N
Subcategory: Transistors
Technology: SiC
Tradename: Sic JFET
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs - Gate-Source Breakdown Voltage: -20 V to 3 V
Вес, г 1

Техническая документация

Datasheet
pdf, 260 КБ

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