APT40GR120S, IGBTs IGBT MOS 8 1200 V 40 A TO-268
10 100 ֏
от 10 шт. —
9 600 ֏
от 25 шт. —
8 500 ֏
от 100 шт. —
7 800 ֏
1 шт.
на сумму 10 100 ֏
Описание
Unclassified
Технические параметры
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 88 A |
| Factory Pack Quantity: | 1 |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Packaging: | Tube |
| Pd - Power Dissipation: | 500 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 7 |
