APT8M100B, MOSFET MOSFET MOS8 1000 V 8 A TO-247
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Технические параметры
| Brand: | Microchip Technology/Atmel |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Fall Time: | 7.2 ns |
| Forward Transconductance - Min: | 7.5 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 290 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 1.53 Ohms |
| Rise Time: | 7.8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | Power MOS 8 |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 29 ns |
| Typical Turn-On Delay Time: | 8.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 6 |
