ARF1501, RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 750 W 40 MHz T1
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см. техническую документацию
см. техническую документацию
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Описание
RF & Wireless\RF Transistors\RF MOSFET Transistors
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Fall Time: | 13 ns |
| Forward Transconductance - Min: | 5.5 mS |
| Gain: | 17 dB |
| Id - Continuous Drain Current: | 30 A |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Flange Mount |
| Operating Frequency: | 40 MHz |
| Operating Temperature Range: | -55 C to+175 C |
| Output Power: | 750 W |
| Pd - Power Dissipation: | 1.5 kW |
| Product Category: | RF MOSFET Transistors |
| Product Type: | RF MOSFET Transistors |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Type: | RF Power MOSFET |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 141 КБ
