MASTERGAN2, Gate Drivers High power density 600V Half bridge driver with two enhancement mode GaN HEMT

MASTERGAN GaN Half-Bridge High Voltage Drivers
STMicroelectronics MASTERGAN GaN Half-Bridge High Voltage Drivers implement a high power density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration. The integrated power GaNs feature an R DS(ON) of 150mΩ and 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.