STGAP2SICS, Galvanically Isolated Gate Drivers Galvanically isolated 4 A single gate driver for SiC MOSFETs
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Описание
Power\Power Management ICs\Galvanically Isolated Gate Drivers
STGAP2SICS Single Gate DriversSTMicroelectronics STGAP2SICS Single Gate Drivers are single gate drivers that provide galvanic isolation between the gate driving channel and the low voltage control and interface circuitry. The gate drivers are characterized by 4A capability and rail-to-rail outputs, making the devices also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins (STGAP2SICSTR) allows the user to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring a single output pin and Miller CLAMP function (STGAP2SICSCTR) prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and a bill of material reduction for external components.
Технические параметры
| Brand: | STMicroelectronics |
| Configuration: | Non-Inverting |
| Factory Pack Quantity: Factory Pack Quantity: | 800 |
| Fall Time: | 30 ns |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Drivers: | 1 Driver |
| Number of Outputs: | 1 Output |
| Output Current: | 4 A |
| Package / Case: | SO-8W |
| Packaging: | Tube |
| Product Category: | Isolated Gate Drivers |
| Product Type: | Isolated Gate Drivers |
| Product: | Isolated Gate Drivers |
| Propagation Delay - Max: | 90 ns |
| Rise Time: | 30 ns |
| Series: | STGAP2SICS |
| Subcategory: | PMIC-Power Management ICs |
| Supply Voltage - Max: | 5.5 V |
| Supply Voltage - Min: | 3 V |
| Technology: | SiC |
| Type: | Half-Bridge |
| Approval Agency | UL |
| Common Mode Transient Immunity (Min) | 100V/ns |
| Current - Output High, Low | 4A, 4A |
| Current - Peak Output | 4A |
| ECCN | EAR99 |
| HTSUS | 8542.39.0001 |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Operating Temperature | -40В°C ~ 125В°C |
| Package | Tube |
| Package / Case | 8-SOIC (0.295"", 7.50mm Width) |
| Propagation Delay tpLH / tpHL (Max) | 90ns, 90ns |
| Pulse Width Distortion (Max) | 20ns |
| REACH Status | REACH Unaffected |
| Rise / Fall Time (Typ) | 30ns, 30ns |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 8-SO |
| Technology | Capacitive Coupling |
| Voltage - Isolation | 5000Vrms |
| Voltage - Output Supply | 3V ~ 5.5V |
| Number of Drivers | 1 |
| Package Type | SO-8W |
| Pin Count | 8 |
| Topology | Galvanic Isolated |
| IC Case / Package | WSOIC |
| Задержка Выхода | 75нс |
| Задержка по Входу | 75нс |
| Количество Выводов | 8вывод(-ов) |
| Конфигурация Привода | Полумост |
| Максимальная Рабочая Температура | 125°C |
| Максимальное Напряжение Питания | 26В |
| Минимальная Рабочая Температура | -40°C |
| Минимальное Напряжение Питания | 16.4В |
| Стиль Корпуса Привода | WSOIC |
| Тип переключателя питания | SiC MOSFET |
| Уровень Чувствительности к Влажности (MSL) | MSL 3-168 часов |
| Type | 电源管理 |
| Вес, г | 0.15 |
Техническая документация
Datasheet STGAP2SICS
pdf, 543 КБ
Документация
pdf, 553 КБ
Сроки доставки
Доставка в регион Ереван
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