FODM8801CR2V, Transistor Output Optocouplers OptoHiT Series, High-Temperature Phototransistor

FODM8801CR2V, Transistor Output Optocouplers OptoHiT Series, High-Temperature Phototransistor
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см. техническую документацию
2 600 ֏
от 10 шт.1 630 ֏
от 100 шт.1 180 ֏
от 250 шт.1 080 ֏
1 шт. на сумму 2 600 ֏
Номенклатурный номер: 8004834459

Описание

Optoelectronics\Optocouplers / Photocouplers\Transistor Output Optocouplers
FODM8801 OptoHiT™ Phototransistors
onsemi FODM8801 OptoHiT™ Phototransistors are first-of-their-kind phototransistors, utilizing a leading-edge, proprietary process technology to achieve high operating temperature characteristics up to +125°C. The optocoupler consists of an aluminum gallium arsenide (AlGaAs) infrared light emitting diode (LED) optically coupled to a phototransistor, in a compact half pitch, mini-flat, 4-pin package. It delivers high current transfer ratio at very low input current. The input-output isolation voltage, V ISO, is rated at 3750 VAC RMS. onsemi FODM8801 devices are ideally suited for use in DC-DC converters.

Технические параметры

Brand: onsemi/Fairchild
Collector-Emitter Breakdown Voltage: 75 V
Configuration: 1 Channel
Current Transfer Ratio - Max: 400%
Current Transfer Ratio - Min: 200%
Current Transfer Ratio: 200%
Factory Pack Quantity: Factory Pack Quantity: 2500
Fall Time: 5.5 us
If - Forward Current: 20 mA
Isolation Voltage: 3750 Vrms
Manufacturer: onsemi
Maximum Collector Current: 30 mA
Maximum Collector Emitter Saturation Voltage: 400 mV
Maximum Collector Emitter Voltage: 75 V
Maximum Operating Temperature: +125 C
Minimum Operating Temperature: -40 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Output Type: NPN Phototransistor
Package / Case: Miniflat-4
Pd - Power Dissipation: 150 mW
Product Category: Transistor Output Optocouplers
Product Type: Transistor Output Optocouplers
Rise Time: 5 us
Series: FODM8801C
Subcategory: Optocouplers
Vf - Forward Voltage: 1.8 V
Vr - Reverse Voltage: 6 V
Brand ON Semiconductor/Fairchild
Collector-Emitter Breakdown Voltage 75 V
Configuration 1 Channel
Current Transfer Ratio 200%to 400%
Factory Pack Quantity 2500
Fall Time 5.5 us
Height 2.39 mm
If - Forward Current 1 mA
Isolation Voltage 3750 Vrms
Length 4.4 mm
Manufacturer ON Semiconductor
Maximum Collector Current 30 mA
Maximum Collector Emitter Saturation Voltage 400 mV
Maximum Collector Emitter Voltage 75 V
Maximum Operating Temperature +125 C
Minimum Operating Temperature -40 C
Mounting Style SMD/SMT
Number of Channels 1 Channel
Output Type NPN Phototransistor
Package / Case Miniflat-4
Packaging Reel
Pd - Power Dissipation 150 mW
Product Category Transistor Output Optocouplers
Rise Time 5 us
RoHS Details
Series FODM8801C
Unit Weight 0.004233 oz
Vf - Forward Voltage 1.8 V
Vr - Reverse Voltage 6 V
Width 2.69 mm
Вес, г 0.12

Техническая документация

Datasheet
pdf, 199 КБ
Документация
pdf, 281 КБ