BCX41TA, Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 3K

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530 ֏

от 10 шт. — 308 ֏

от 100 шт. — 141 ֏

от 1000 шт. — 95 ֏

1 шт. на сумму 530 ֏

Номенклатурный номер: 8004841594

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: NPN, биполярный, 125В, 0,8А, 330мВт, SOT23 Характеристики

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	125 V
Collector- Emitter Voltage VCEO Max:	125 V
Collector-Emitter Saturation Voltage:	900 mV
Configuration:	Single
DC Current Gain hFE Max:	25 at 100 uA, 1 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	800 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	310 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BCX41
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Base Product Number	BCX41 ->
Current - Collector (Ic) (Max)	800mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 100ВµA, 1V
ECCN	EAR99
Frequency - Transition	100MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	330mW
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	SOT-23
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	900mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)	125V
Вес, г	0.01