BSR33TA, Bipolar Transistors - BJT PNP Medium Power

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620 ֏

от 10 шт. — 484 ֏

от 100 шт. — 203 ֏

от 1000 шт. — 116 ֏

1 шт. на сумму 620 ֏

Номенклатурный номер: 8004841613

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Описание Транзистор: PNP, биполярный, 80В, 1А, 1Вт, SOT89 Характеристики

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	90 V
Collector- Emitter Voltage VCEO Max:	80 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	-1 A
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	BSR33
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Brand	Diodes Incorporated
Collector- Base Voltage VCBO	-90 V
Collector- Emitter Voltage VCEO Max	-80 V
Collector-Emitter Saturation Voltage	-0.5 V
Configuration	Single
Continuous Collector Current	-1 A
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	1000
Gain Bandwidth Product FT	100 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	1 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	SMD/SMT
Package / Case	SOT-89-3
Packaging	Cut Tape or Reel
Pd - Power Dissipation	1 W
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	BSR33
Subcategory	Transistors
Transistor Polarity	PNP
Вес, г	0.05