DXT458P5-13, Bipolar Transistors - BJT BIPOLAR TRANS,NPN 400V,300mA
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см. техническую документацию
см. техническую документацию
660 ֏
от 10 шт. —
530 ֏
от 100 шт. —
348 ֏
от 500 шт. —
257 ֏
1 шт.
на сумму 660 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
PowerDI 5 Bipolar TransistorsDiodes Incorporated PowerDI ® 5 Bipolar Transistors are the first bipolar transistors in a PowerDI 5 package, which provides a 47% space savings over the SOT223 package. These Diodes Incorporated PowerDI 5 bipolar transistors are also 60% smaller than DPAK (TO252) package devices.
Технические параметры
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 400 V |
Collector- Emitter Voltage VCEO Max: | 400 V |
Collector-Emitter Saturation Voltage: | 500 mV |
Configuration: | Single |
Continuous Collector Current: | 300 mA |
DC Collector/Base Gain hfe Min: | 15 at 100 mA, 10 V |
Emitter- Base Voltage VEBO: | 5 V |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Gain Bandwidth Product fT: | 50 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 300 mA |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | PowerDI-5 |
Pd - Power Dissipation: | 700 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | DXT458 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Вес, г | 0.1 |
Техническая документация
Datasheet DXT458P5-13
pdf, 198 КБ