DXTP19020DP5-13, Bipolar Transistors - BJT BIPOLAR TRANS,PNP

Фото 1/2 DXTP19020DP5-13, Bipolar Transistors - BJT BIPOLAR TRANS,PNP
Изображения служат только для ознакомления,
см. техническую документацию
750 ֏
от 10 шт.660 ֏
от 100 шт.405 ֏
от 500 шт.305 ֏
1 шт. на сумму 750 ֏
Номенклатурный номер: 8004841634
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT
Trans GP BJT PNP 20V 8A 3000mW 3-Pin(3+Tab) PowerDI 5 T/R

Технические параметры

Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 25 V
Collector- Emitter Voltage VCEO Max: 20 V
Collector-Emitter Saturation Voltage: 1.15 V
Configuration: Single
Continuous Collector Current: -8 A
DC Collector/Base Gain hfe Min: 45 at-8 A, -2 V
Emitter- Base Voltage VEBO: 7 V
Factory Pack Quantity: Factory Pack Quantity: 5000
Gain Bandwidth Product fT: 176 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 8 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Pd - Power Dissipation: 1.3 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: DXTP19020
Subcategory: Transistors
Technology: Si
Transistor Polarity: PNP
Automotive No
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant
Maximum Base Emitter Saturation Voltage (V) 1.15@800mA@8A
Maximum Collector Base Voltage (V) 25
Maximum Collector-Emitter Voltage (V) 20
Maximum DC Collector Current (A) 8
Maximum Emitter Base Voltage (V) 7
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 3000
Maximum Transition Frequency (MHz) 176(Typ)
Minimum DC Current Gain 300@100mA@2V|200@2A@2V|45@8A@2V
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Bipolar Power
Supplier Package PowerDI 5
Tab Tab
Type PNP
Вес, г 464.3

Техническая документация

Datasheet
pdf, 132 КБ