FCX593TA, Bipolar Transistors - BJT PNP Medium Power

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710 ֏

от 10 шт. — 484 ֏

от 100 шт. — 361 ֏

от 500 шт. — 281 ֏

1 шт. на сумму 710 ֏

Номенклатурный номер: 8004841650

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Trans GP BJT PNP 100V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	120 V
Collector- Emitter Voltage VCEO Max:	100 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	-1 A
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	50 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-89-3
Pd - Power Dissipation:	1 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	FCX59
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Automotive	No
Configuration	Single Dual Collector
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Flat
Material	Si
Maximum Base Emitter Saturation Voltage (V)	1.1 50mA 500mA
Maximum Collector Base Voltage (V)	120
Maximum Collector-Emitter Saturation Voltage (V)	0.2 25mA 250mA\|0.3 25mA 250mA
Maximum Collector-Emitter Voltage (V)	100
Maximum DC Collector Current (A)	1
Maximum Emitter Base Voltage (V)	7
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2000
Maximum Transition Frequency (MHz)	50(Min)
Minimum DC Current Gain	100 1mA 5V\|100 250mA 5V\|100 500mA 5V\|50 1A 5V
Minimum Operating Temperature (°C)	-65
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	4
PPAP	No
Product Category	Bipolar Power
Standard Package Name	SOT
Supplier Package	SOT-89
Tab	Tab
Type	PNP
Вес, г	0.05