FMMT555TA, Bipolar Transistors - BJT PNP High Voltage

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396 ֏

от 10 шт. — 308 ֏

от 100 шт. — 163 ֏

от 1000 шт. — 108 ֏

1 шт. на сумму 396 ֏

Номенклатурный номер: 8004841675

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	160 V
Collector- Emitter Voltage VCEO Max:	150 V
Collector-Emitter Saturation Voltage:	300 mV
Configuration:	Single
Continuous Collector Current:	-1 A
DC Collector/Base Gain hfe Min:	50 at 10 mA, 10 V, 50 at 300 mA, 10 V
DC Current Gain hFE Max:	50 at 10 mA, 10 V
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	1 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-23-3
Pd - Power Dissipation:	500 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	FMMT55
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Maximum Collector Base Voltage	-160 V
Maximum Collector Emitter Voltage	150 V
Maximum DC Collector Current	1 A
Maximum Emitter Base Voltage	-5 V
Maximum Operating Frequency	100 MHz
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	500 mW
Minimum DC Current Gain	50
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Type	PNP
Collector Current (Ic)	1A
Collector Cut-Off Current (Icbo)	100nA
Collector-Emitter Breakdown Voltage (Vceo)	150V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	300mV@10mA, 100mA
DC Current Gain (hFE@Ic,Vce)	50@300mA, 10V
Power Dissipation (Pd)	500mW
Transition Frequency (fT)	100MHz
Вес, г	0.01